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| Part Number | IPB60R060P7ATMA1 | IPB60R360P7ATMA1 | IPB60R080P7ATMA1 | IPB60R060C7ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 600 V | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) | 9A (Tc) | 37A (Tc) | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 15.9A, 10V | 360mOhm @ 2.7A, 10V | 80mOhm @ 11.8A, 10V | 60mOhm @ 15.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 800µA | 4V @ 140µA | 4V @ 590µA | 4V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | 13 nC @ 10 V | 51 nC @ 10 V | 68 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2895 pF @ 400 V | 555 pF @ 400 V | 2180 pF @ 400 V | 2850 pF @ 400 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 164W (Tc) | 41W (Tc) | 129W (Tc) | 162W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 | D2PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
