IPB50R250CPATMA1
  • Share:

Infineon Technologies IPB50R250CPATMA1

Manufacturer No:
IPB50R250CPATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB50R250CPATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 550V 13A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
348

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB50R250CPATMA1 IPB60R250CPATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V 250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 520µA 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 100 V 1200 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 114W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

2SK3900-ZP-E1-AZ
2SK3900-ZP-E1-AZ
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
IST007N04NM6AUMA1
IST007N04NM6AUMA1
Infineon Technologies
MOSFET N-CH 40V 54A/440A HSOF-5
SSM3K16CT,L3F
SSM3K16CT,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA CST3
ZXMN10B08E6TA
ZXMN10B08E6TA
Diodes Incorporated
MOSFET N-CH 100V 1.6A SOT26
STS10P4LLF6
STS10P4LLF6
STMicroelectronics
MOSFET P-CH 40V 10A 8SO
PJQ5420_R2_00001
PJQ5420_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
DMN3066LQ-7
DMN3066LQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
NTMFS4C020NT1G
NTMFS4C020NT1G
onsemi
MOSFET N-CH 30V 47A/303A 5DFN
NTLGF3501NT2G
NTLGF3501NT2G
onsemi
MOSFET N-CH 20V 2.8A 6DFN
IPI80P03P4L04AKSA1
IPI80P03P4L04AKSA1
Infineon Technologies
MOSFET P-CH 30V 80A TO262-3
AON6232A
AON6232A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 40V 35A/85A 8DFN
HAT2169H-EL-E
HAT2169H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 40V 50A LFPAK

Related Product By Brand

IDL04G65C5XUMA2
IDL04G65C5XUMA2
Infineon Technologies
DIODE SCHOTTKY 650V 4A VSON-4
IRFP3306PBF
IRFP3306PBF
Infineon Technologies
MOSFET N-CH 60V 120A TO247AC
IRFR5505
IRFR5505
Infineon Technologies
MOSFET P-CH 55V 18A DPAK
IRF3711ZSTRRPBF
IRF3711ZSTRRPBF
Infineon Technologies
MOSFET N-CH 20V 92A D2PAK
IRFH5204TRPBF
IRFH5204TRPBF
Infineon Technologies
MOSFET N-CH 40V 22A/100A PQFN
IKD04N60RAATMA1
IKD04N60RAATMA1
Infineon Technologies
IGBT TRENCH 600V 8A TO252-3
IKW50N65H5AXKSA1
IKW50N65H5AXKSA1
Infineon Technologies
IGBT 650V 80A 305W PG-TO247-3
MB90867ASPFV-G-136-JNE1
MB90867ASPFV-G-136-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY96F6C6RBPMC-GS-UJF4E1
CY96F6C6RBPMC-GS-UJF4E1
Infineon Technologies
IC MCU 16BIT 288KB FLASH 120LQFP
S70GL02GS12FHIV20
S70GL02GS12FHIV20
Infineon Technologies
IC FLASH 2GBIT PARALLEL 64FBGA
CY62167GN-45ZXI
CY62167GN-45ZXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48TSOP I
CY7C144-15AXCT
CY7C144-15AXCT
Infineon Technologies
IC SRAM 64KBIT PARALLEL 64TQFP