Infineon Technologies-IPB45P03P4L11ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10.8mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:	2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:	55 nC @ 10 V
Vgs (Max):	+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	3770 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	58W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Infineon Technologies IPB45P03P4L11ATMA1