IPB45N06S409ATMA2
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Infineon Technologies IPB45N06S409ATMA2

Manufacturer No:
IPB45N06S409ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB45N06S409ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 45A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3785 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB45N06S409ATMA2 IPB45N06S409ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 45A, 10V 9.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 34µA 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3785 pF @ 25 V 3785 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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