Infineon Technologies-IPB19DP10NMATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	2.9A (Ta), 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	185mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs:	45 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2000 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 83W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Infineon Technologies IPB19DP10NMATMA1