IPB180P04P4L02ATMA1
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Infineon Technologies IPB180P04P4L02ATMA1

Manufacturer No:
IPB180P04P4L02ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB180P04P4L02ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 180A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs:286 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:18700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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$4.81
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Similar Products

Part Number IPB180P04P4L02ATMA1 IPB180P04P4L02ATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 410µA 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V 286 nC @ 10 V
Vgs (Max) ±16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 18700 pF @ 25 V 18700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-3 PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

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