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| Part Number | IPB180N04S302ATMA1 | IPB120N04S302ATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 40 V | - |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 80A, 10V | - |
| Vgs(th) (Max) @ Id | 4V @ 230µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Supplier Device Package | PG-TO263-7-3 | - |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | - |
