IPB180N03S4L01ATMA1
  • Share:

Infineon Technologies IPB180N03S4L01ATMA1

Manufacturer No:
IPB180N03S4L01ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB180N03S4L01ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:239 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:17600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$1.59
398

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB180N03S4L01ATMA1 IPB180N04S4L01ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.05mOhm @ 100A, 10V 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 140µA 2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 239 nC @ 10 V 245 nC @ 10 V
Vgs (Max) ±16V +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 17600 pF @ 25 V 19100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 188W (Tc) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-3 PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
FDS4070N7
FDS4070N7
Fairchild Semiconductor
MOSFET N-CH 40V 15.3A 8SO
IRF9520NPBF
IRF9520NPBF
Infineon Technologies
MOSFET P-CH 100V 6.8A TO220AB
SIHF12N60E-GE3
SIHF12N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 12A TO220
SI4090DY-T1-GE3
SI4090DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 19.7A 8SO
SI7414DN-T1-E3
SI7414DN-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 5.6A PPAK1212-8
NVTYS005N04CTWG
NVTYS005N04CTWG
onsemi
T6 40V N-CH SL IN LFPAK33
SPD15N06S2L-64
SPD15N06S2L-64
Infineon Technologies
MOSFET N-CH 55V 19A TO252-3
FDMC8026S
FDMC8026S
onsemi
MOSFET N-CH 30V 19A/21A 8MLP
NVD4806NT4G
NVD4806NT4G
onsemi
MOSFET N-CH 30V 76A DPAK
RUM002N05T2L
RUM002N05T2L
Rohm Semiconductor
MOSFET N-CH 50V 200MA VMT3
RSD201N10TL
RSD201N10TL
Rohm Semiconductor
MOSFET N-CH 100V 20A CPT3

Related Product By Brand

BFP843H6327XTSA1
BFP843H6327XTSA1
Infineon Technologies
RF TRANS NPN 2.25V SOT343
AUIRF7379QTR
AUIRF7379QTR
Infineon Technologies
MOSFET N/P-CH 30V 5.8A/4.3A 8SO
IPP086N10N3
IPP086N10N3
Infineon Technologies
N-CHANNEL POWER MOSFET
IRF7534D1PBF
IRF7534D1PBF
Infineon Technologies
MOSFET P-CH 20V 4.3A MICRO8
IR3088MTRPBF
IR3088MTRPBF
Infineon Technologies
IC CTLR XPHASE 28-MLPQ
MB90591GHZPFR-GS-187-ER
MB90591GHZPFR-GS-187-ER
Infineon Technologies
IC MCU 16BIT 384KB MROM 100QFP
CY8C3646PVE-171
CY8C3646PVE-171
Infineon Technologies
IC MCU 8BIT 64KB FLASH 48SSOP
MB90347DASPFV-GS-720E1
MB90347DASPFV-GS-720E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB95F128MBPMC-G-N9E1
MB95F128MBPMC-G-N9E1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 100LQFP
S25FL064LABBHB030
S25FL064LABBHB030
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 24BGA
CY62136ESL-45ZSXI
CY62136ESL-45ZSXI
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
CY7C1315CV18-200BZC
CY7C1315CV18-200BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA