IPB160N04S203ATMA4
  • Share:

Infineon Technologies IPB160N04S203ATMA4

Manufacturer No:
IPB160N04S203ATMA4
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB160N04S203ATMA4 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 160A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$3.03
236

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB160N04S203ATMA4 IPB160N04S203ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 60A, 10V 2.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7-3 PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

BSS138W-TP
BSS138W-TP
Micro Commercial Co
MOSFET N-CH 50V 220MA SOT323
TK040N65Z,S1F
TK040N65Z,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 57A TO247
TQM300NB06CR RLG
TQM300NB06CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 6A/27A 8PDFNU
BSO613SPVGXUMA1
BSO613SPVGXUMA1
Infineon Technologies
MOSFET N/P-CH 8-SOIC
PJL9401_R2_00001
PJL9401_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
NVMFS5C628NLWFAFT3G
NVMFS5C628NLWFAFT3G
onsemi
MOSFET N-CH 60V 28A/150A 5DFN
IPI60R199CPXKSA1
IPI60R199CPXKSA1
Infineon Technologies
MOSFET N-CH 600V 16A TO262-3
SN7002N E6327
SN7002N E6327
Infineon Technologies
MOSFET N-CH 60V 200MA SOT23-3
BSS214NW L6327
BSS214NW L6327
Infineon Technologies
MOSFET N-CH 20V 1.5A SOT323-3
NTLJS3A18PZTWG
NTLJS3A18PZTWG
onsemi
MOSFET P-CH 20V 5A 6WDFN
NVMFS5885NLWFT3G
NVMFS5885NLWFT3G
onsemi
MOSFET N-CH 60V 10.2A 5DFN
PJD7NA60_L2_00001
PJD7NA60_L2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET

Related Product By Brand

BSC0923NDIATMA1
BSC0923NDIATMA1
Infineon Technologies
MOSFET 2N-CH 30V 17A/32A TISON8
IPB03N03LB G
IPB03N03LB G
Infineon Technologies
MOSFET N-CH 30V 80A D2PAK
IRFZ44VZSTRRPBF
IRFZ44VZSTRRPBF
Infineon Technologies
MOSFET N-CH 60V 57A D2PAK
IR3514MTRPBF
IR3514MTRPBF
Infineon Technologies
IC XPHASE3 CONTROL HYBRD 40-MLPQ
IR3531MTRPBF
IR3531MTRPBF
Infineon Technologies
IC OUTPUT CTRL 4+1 PHASE 48MLPQ
CY3214-PSOCEVALUSB
CY3214-PSOCEVALUSB
Infineon Technologies
CY8C24894 EVAL BRD
CY23FP12OXC-003
CY23FP12OXC-003
Infineon Technologies
IC CLK ZDB 12OUT 200MHZ 28SSOP
MB90594GHPF-GS-171E1
MB90594GHPF-GS-171E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
CY8C9540A-24PVXIT
CY8C9540A-24PVXIT
Infineon Technologies
IC I/O EXPANDER I2C 40B 48SSOP
S29GL512S10TFI010
S29GL512S10TFI010
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
S29AL016J55TFNR10
S29AL016J55TFNR10
Infineon Technologies
IC FLASH 16MBIT PARALLEL 48TSOP
CY7C1061AV33-10ZXI
CY7C1061AV33-10ZXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II