IPB120P04P404ATMA2
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Infineon Technologies IPB120P04P404ATMA2

Manufacturer No:
IPB120P04P404ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB120P04P404ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 120A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:205 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14790 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB120P04P404ATMA2 IPB120P04P404ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 100A, 10V 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 340µA 4V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 205 nC @ 10 V 205 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14790 pF @ 25 V 14790 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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