IPB120N10S405ATMA1
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Infineon Technologies IPB120N10S405ATMA1

Manufacturer No:
IPB120N10S405ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB120N10S405ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 120A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6540 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB120N10S405ATMA1 IPB120N10S403ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 100A, 10V 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 120µA 3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6540 pF @ 25 V 10120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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