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| Part Number | IPB120N08S403ATMA1 | IPB120N08S404ATMA1 | IPB160N08S403ATMA1 | IPB120N06S403ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | 80 V | 80 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 160A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V | 4.1mOhm @ 100A, 10V | 3.2mOhm @ 100A, 10V | 2.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 223µA | 4V @ 120µA | 4V @ 150µA | 4V @ 120µA |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V | 95 nC @ 10 V | 112 nC @ 10 V | 160 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11550 pF @ 25 V | 6450 pF @ 25 V | 7750 pF @ 25 V | 13150 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 278W (Tc) | 179W (Tc) | 208W (Tc) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3 | PG-TO263-7-3 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
