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| Part Number | IPB120N06S403ATMA1 | IPB120N06S403ATMA2 | IPB120N08S403ATMA1 | IPB120N06S402ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Active | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 80 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 120A (Tc) | 120A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V | 3.2mOhm @ 100A, 10V | 2.5mOhm @ 100A, 10V | 2.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 120µA | 4V @ 120µA | 4V @ 223µA | 4V @ 140µA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V | 160 nC @ 10 V | 167 nC @ 10 V | 195 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13150 pF @ 25 V | 13150 pF @ 25 V | 11550 pF @ 25 V | 15750 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 167W (Tc) | 167W (Tc) | 278W (Tc) | 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
