IPB120N04S4L02ATMA1
  • Share:

Infineon Technologies IPB120N04S4L02ATMA1

Manufacturer No:
IPB120N04S4L02ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB120N04S4L02ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:14560 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.92
384

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB120N04S4L02ATMA1 IPB120N04S402ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 110µA 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 134 nC @ 10 V
Vgs (Max) +20V, -16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14560 pF @ 25 V 10740 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 158W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IPP60R199CPXKSA1
IPP60R199CPXKSA1
Infineon Technologies
MOSFET N-CH 650V 16A TO220-3
UPA2790GR-E1-A
UPA2790GR-E1-A
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
FDS6688
FDS6688
Fairchild Semiconductor
MOSFET N-CH 30V 16A 8SOIC
2SK4096LS-1E
2SK4096LS-1E
onsemi
N-CHANNEL POWER MOSFET
AUIRF1405-INF
AUIRF1405-INF
Infineon Technologies
AUTOMOTIVE HEXFET N CHANNEL
PJF60R190E_T0_00001
PJF60R190E_T0_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
PSMN050-80PS,127
PSMN050-80PS,127
NXP USA Inc.
MOSFET N-CH 80V 22A TO220AB
2SK1058-E
2SK1058-E
Renesas Electronics America Inc
MOSFET N-CH 160V 7A TO3P
IRF7854PBF
IRF7854PBF
Infineon Technologies
MOSFET N-CH 80V 10A 8SO
2SK1829TE85LF
2SK1829TE85LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 50MA SC70
MCH3377-TL-W
MCH3377-TL-W
onsemi
MOSFET P-CH 20V 3A 3MCPH
IPD06P005LSAUMA1
IPD06P005LSAUMA1
Infineon Technologies
MOSFET P-CH 60V 6.5A TO252-3

Related Product By Brand

BCR 108F E6327
BCR 108F E6327
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
IRFSL7787PBF
IRFSL7787PBF
Infineon Technologies
MOSFET N-CH 75V 76A TO262
SAB82532H10V32A
SAB82532H10V32A
Infineon Technologies
IC INTERFACE SPECIALIZED 80MQFP
AUIPS7141R
AUIPS7141R
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
IFX1763XEJV50XUMA1
IFX1763XEJV50XUMA1
Infineon Technologies
IC REG LIN 5V 500MA 8DSO E-PAD
1EDI05I12AFXUMA1
1EDI05I12AFXUMA1
Infineon Technologies
IC IGBT DVR 1200V DSO8
CY91F526KSBPMC1-GSE1
CY91F526KSBPMC1-GSE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
MB90025FPMT-GS-257E1
MB90025FPMT-GS-257E1
Infineon Technologies
IC MCU 120LQFP
S70FL01GSAGMFI013
S70FL01GSAGMFI013
Infineon Technologies
IC FLASH 1GBIT SPI/QUAD 16SOIC
CY14B104L-BA25XCT
CY14B104L-BA25XCT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
CY7C10212DV33-10BVXIT
CY7C10212DV33-10BVXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 48TFBGA
S29GL256P11FFIS12
S29GL256P11FFIS12
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA