IPB120N04S4L02ATMA1
  • Share:

Infineon Technologies IPB120N04S4L02ATMA1

Manufacturer No:
IPB120N04S4L02ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB120N04S4L02ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:14560 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.92
384

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB120N04S4L02ATMA1 IPB120N04S402ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V 1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 110µA 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 134 nC @ 10 V
Vgs (Max) +20V, -16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14560 pF @ 25 V 10740 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 158W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

SKI07114
SKI07114
Sanken
MOSFET N-CH 75V 62A TO263
FDFMA2P853
FDFMA2P853
Fairchild Semiconductor
MOSFET P-CH 20V 3A 6MICROFET
AOB12N65L
AOB12N65L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 12A TO263
SIHL620S-GE3
SIHL620S-GE3
Vishay Siliconix
LOGIC MOSFET N-CHANNEL 200V
NVTYS007N04CTWG
NVTYS007N04CTWG
onsemi
T6 40V N-CH SL IN LFPAK33
SUD50P06-15L-T4-E3
SUD50P06-15L-T4-E3
Vishay Siliconix
MOSFET P-CH 60V 50A TO252
IRF7402PBF
IRF7402PBF
Infineon Technologies
MOSFET N-CH 20V 6.8A 8SO
IXFP3N50PM
IXFP3N50PM
IXYS
MOSFET N-CH 500V 2.7A TO220AB
TPC6006-H(TE85L,F)
TPC6006-H(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 3.9A VS-6
NTHS5443T1G
NTHS5443T1G
onsemi
MOSFET P-CH 20V 3.6A CHIPFET
2SK4151TZ-E
2SK4151TZ-E
Renesas Electronics America Inc
MOSFET N-CH 150V 1A TO92
SQS423EN-T1_GE3
SQS423EN-T1_GE3
Vishay Siliconix
MOSFET P-CH 30V 16A PPAK1212-8

Related Product By Brand

DZ950N44KHPSA1
DZ950N44KHPSA1
Infineon Technologies
DIODE GEN PURP 4.4KV 950A MODULE
TD430N22KOFTIMHPSA1
TD430N22KOFTIMHPSA1
Infineon Technologies
SCR MODULE 2200V 800A MODULE
T1901N80TOHXPSA1
T1901N80TOHXPSA1
Infineon Technologies
SCR MODULE 8000V 3300A DO200AE
BSP320SH6327XTSA1
BSP320SH6327XTSA1
Infineon Technologies
MOSFET N-CH 60V 2.9A SOT223-4
IPA90R340C3XKSA2
IPA90R340C3XKSA2
Infineon Technologies
MOSFET N-CH 900V 15A TO220
IRLR3715TRRPBF
IRLR3715TRRPBF
Infineon Technologies
MOSFET N-CH 20V 54A DPAK
IPB65R280E6ATMA1
IPB65R280E6ATMA1
Infineon Technologies
MOSFET N-CH 650V 13.8A D2PAK
IRGI4061DPBF
IRGI4061DPBF
Infineon Technologies
IGBT 600V 20A 43W TO220FP
XMC1401Q048F0128AAXUMA1
XMC1401Q048F0128AAXUMA1
Infineon Technologies
IC MCU 32BIT 128KB FLASH 48VQFN
TLE9012AQUXUMA1
TLE9012AQUXUMA1
Infineon Technologies
IC BATT BALANCER 12CELL
IRS25411SPBF
IRS25411SPBF
Infineon Technologies
IC LED DRIVER CTRLR PWM 8SOIC
S34MS08G201BHI000
S34MS08G201BHI000
Infineon Technologies
IC FLASH 8GBIT PARALLEL 63BGA