IPB120N04S402ATMA1
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Infineon Technologies IPB120N04S402ATMA1

Manufacturer No:
IPB120N04S402ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB120N04S402ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:134 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10740 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB120N04S402ATMA1 IPB120N04S404ATMA1   IPB120N04S4L02ATMA1   IPB120N06S402ATMA1   IPB120N04S302ATMA1   IPB120N04S401ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 60 V - 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc) 120A (Tc) - 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V - 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 100A, 10V 3.6mOhm @ 100A, 10V 1.7mOhm @ 100A, 10V 2.4mOhm @ 100A, 10V - 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA 4V @ 40µA 2.2V @ 110µA 4V @ 140µA - 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V 55 nC @ 10 V 190 nC @ 10 V 195 nC @ 10 V - 176 nC @ 10 V
Vgs (Max) ±20V ±20V +20V, -16V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 10740 pF @ 25 V 4100 pF @ 25 V 14560 pF @ 25 V 15750 pF @ 25 V - 14000 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 158W (Tc) 79W (Tc) 158W (Tc) 188W (Tc) - 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3 PG-TO263-3 PG-TO263-3-2 - PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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