IPB120N04S302ATMA1
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Infineon Technologies IPB120N04S302ATMA1

Manufacturer No:
IPB120N04S302ATMA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPB120N04S302ATMA1 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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Similar Products

Part Number IPB120N04S302ATMA1 IPB120N04S402ATMA1   IPB180N04S302ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs
FET Type - N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 40 V 40 V
Current - Continuous Drain (Id) @ 25°C - 120A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs - 1.8mOhm @ 100A, 10V 1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id - 4V @ 110µA 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs - 134 nC @ 10 V 210 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 10740 pF @ 25 V 14300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 158W (Tc) 300W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount Surface Mount
Supplier Device Package - PG-TO263-3 PG-TO263-7-3
Package / Case - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-7, D²Pak (6 Leads + Tab)

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