Infineon Technologies-IPB110N20N3LFATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	11mOhm @ 88A, 10V
Vgs(th) (Max) @ Id:	4.2V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:	76 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	650 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Infineon Technologies IPB110N20N3LFATMA1