IPB10N03LB G
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Infineon Technologies IPB10N03LB G

Manufacturer No:
IPB10N03LB G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB10N03LB G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1639 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB10N03LB G IPB13N03LB G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 50A, 10V 12.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V 11 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1639 pF @ 15 V 1355 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 58W (Tc) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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