IPB100N12S305ATMA1
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Infineon Technologies IPB100N12S305ATMA1

Manufacturer No:
IPB100N12S305ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB100N12S305ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 120V 100A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-1
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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Similar Products

Part Number IPB100N12S305ATMA1 IPB100N10S305ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V 4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 176 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11570 pF @ 25 V 11570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-1 PG-TO263-3-2
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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