IPB100N08S207ATMA1
  • Share:

Infineon Technologies IPB100N08S207ATMA1

Manufacturer No:
IPB100N08S207ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB100N08S207ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 100A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.07
207

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB100N08S207ATMA1 IPB100N08S2L07ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V 6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 246 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V 5400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFS654B
IRFS654B
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FQB8N60CFTM
FQB8N60CFTM
Fairchild Semiconductor
MOSFET N-CH 600V 6.26A D2PAK
SI2306BDS-T1-BE3
SI2306BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
SIS438DN-T1-GE3
SIS438DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 16A PPAK 1212-8
IRFZ14STRLPBF
IRFZ14STRLPBF
Vishay Siliconix
MOSFET N-CH 60V 10A D2PAK
IRF7704
IRF7704
Infineon Technologies
MOSFET P-CH 40V 4.6A 8TSSOP
BSS209PW
BSS209PW
Infineon Technologies
MOSFET P-CH 20V 580MA SOT323-3
IRF3709ZCSTRR
IRF3709ZCSTRR
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
AON6200L
AON6200L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 13A/24A 8DFN
ATP114-TL-H
ATP114-TL-H
onsemi
MOSFET P-CH 60V 55A ATPAK
TN2130K1-G-VAO
TN2130K1-G-VAO
Microchip Technology
MOSFET N-CH 300V 85MA SOT23-3
PHP152NQ03LTA,127
PHP152NQ03LTA,127
NXP USA Inc.
MOSFET N-CH 25V 75A TO220AB

Related Product By Brand

IDW30E60FKSA1
IDW30E60FKSA1
Infineon Technologies
DIODE GEN PURP 600V 60A TO247-3
BC 860BF E6327
BC 860BF E6327
Infineon Technologies
TRANS PNP 45V 0.1A TSFP-3
IPD80R1K4P7ATMA1
IPD80R1K4P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO252
BSC882N03MSG
BSC882N03MSG
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB083N15N5LFATMA1
IPB083N15N5LFATMA1
Infineon Technologies
MOSFET N-CH 150V 105A D2PAK
SAF-C167CS-L16M3V
SAF-C167CS-L16M3V
Infineon Technologies
LEGACY 16-BIT MCU
IR21363STRPBF
IR21363STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
CY2X014LXI156T
CY2X014LXI156T
Infineon Technologies
IC OSC XTAL 156.25MHZ 6CLCC
MB90423GAVPF-G-228
MB90423GAVPF-G-228
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90547GHDSPQC-G-254ERE2
MB90547GHDSPQC-G-254ERE2
Infineon Technologies
IC MCU 16BIT 64KB MROM 100PQFP
S25FL128LAGMFB000
S25FL128LAGMFB000
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1472V33-167AXI
CY7C1472V33-167AXI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP