IPB100N06S2L05ATMA2
  • Share:

Infineon Technologies IPB100N06S2L05ATMA2

Manufacturer No:
IPB100N06S2L05ATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB100N06S2L05ATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 100A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.66
7

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5660 pF @ 25 V 5660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

RFD7N10LE
RFD7N10LE
Harris Corporation
N-CHANNEL POWER MOSFET
APT34F60S
APT34F60S
Microchip Technology
MOSFET N-CH 600V 36A D3PAK
NTD3055L104T4G
NTD3055L104T4G
onsemi
MOSFET N-CH 60V 12A DPAK
STD4NK50ZT4
STD4NK50ZT4
STMicroelectronics
MOSFET N-CH 500V 3A DPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
AOTF8N50
AOTF8N50
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 8A TO220-3F
IPI80N08S406AKSA1
IPI80N08S406AKSA1
Infineon Technologies
MOSFET N-CH 80V 80A TO262-3
APT66F60L
APT66F60L
Microchip Technology
MOSFET N-CH 600V 70A TO264
APT60M75JLL
APT60M75JLL
Microchip Technology
MOSFET N-CH 600V 58A ISOTOP
IRF2804STRL-7P
IRF2804STRL-7P
Infineon Technologies
MOSFET N-CH 40V 160A D2PAK
DMN5L06W-7
DMN5L06W-7
Diodes Incorporated
MOSFET N-CH 50V 280MA SOT323
AOT210L
AOT210L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 20A/105A TO220

Related Product By Brand

BAR 63-06W H6327
BAR 63-06W H6327
Infineon Technologies
RF PIN DIODE > ANTENNA SWITCH
IPW65R145CFD7AXKSA1
IPW65R145CFD7AXKSA1
Infineon Technologies
MOSFET N-CH 650V 17A TO247-3
IRFR3706PBF
IRFR3706PBF
Infineon Technologies
MOSFET N-CH 20V 75A DPAK
FS25R12W1T7BOMA1
FS25R12W1T7BOMA1
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
IRG4BC30W-STRL
IRG4BC30W-STRL
Infineon Technologies
IGBT 600V 23A 100W D2PAK
BTS436L2G
BTS436L2G
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO263-5
MB89P665PF-G-5019
MB89P665PF-G-5019
Infineon Technologies
IC MCU 8BIT 16KB OTP 64QFP
CY8C3666LTI-042
CY8C3666LTI-042
Infineon Technologies
IC MCU 8BIT 64KB FLASH 68QFN
CY8C24223A-24PVXAT
CY8C24223A-24PVXAT
Infineon Technologies
IC MCU 8BIT 4KB FLASH 20SSOP
MB89636RPF-G-1451E1
MB89636RPF-G-1451E1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
MB90587CPMC-G-105-BNDE1
MB90587CPMC-G-105-BNDE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
S29GL256S90DHSS40
S29GL256S90DHSS40
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA