IPB100N06S205ATMA4
  • Share:

Infineon Technologies IPB100N06S205ATMA4

Manufacturer No:
IPB100N06S205ATMA4
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB100N06S205ATMA4 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 100A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.72
94

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB100N06S205ATMA4 IPB100N06S205ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 80A, 10V 4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5110 pF @ 25 V 5110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

HUF76443S3ST
HUF76443S3ST
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FDD3682
FDD3682
onsemi
MOSFET N-CH 100V 5.5/32A TO252AA
DMTH6004SCTBQ-13
DMTH6004SCTBQ-13
Diodes Incorporated
MOSFET N-CH 60V 100A TO263AB
DMN6075S-13
DMN6075S-13
Diodes Incorporated
MOSFET N-CH 60V 2A SOT23
AOT095A60L
AOT095A60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 38A TO220
IXFA18N60X
IXFA18N60X
IXYS
MOSFET N-CH 600V 18A TO263AA
IRFIZ48N
IRFIZ48N
Infineon Technologies
MOSFET N-CH 55V 36A TO220AB FP
IRLR8113TR
IRLR8113TR
Infineon Technologies
MOSFET N-CH 30V 94A DPAK
IRF3808STRRPBF
IRF3808STRRPBF
Infineon Technologies
MOSFET N-CH 75V 106A D2PAK
IXFR10N100Q
IXFR10N100Q
IXYS
MOSFET N-CH 1000V 9A ISOPLUS247
AON6452L
AON6452L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 6.5A/26A 8DFN
SCT2080KEC
SCT2080KEC
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247

Related Product By Brand

DD435N40KHPSA1
DD435N40KHPSA1
Infineon Technologies
DIODE MODULE GP 4000V 573A
FF2MR12KM1PHOSA1
FF2MR12KM1PHOSA1
Infineon Technologies
MEDIUM POWER 62MM
IRLR9343TRPBF
IRLR9343TRPBF
Infineon Technologies
MOSFET P-CH 55V 20A DPAK
IFX8117MEV50
IFX8117MEV50
Infineon Technologies
IC REG LINEAR FIXED LDO REG
CY22801KSXC-024
CY22801KSXC-024
Infineon Technologies
IC CLOCK GENERATOR
CY2544QC011T
CY2544QC011T
Infineon Technologies
PREMIS SSCG EMI REDUCTION
MB89636RPF-G-652-BNDE1
MB89636RPF-G-652-BNDE1
Infineon Technologies
IC MCU 8BIT 24KB MROM 64QFP
MB90347ESPMC-GS-670E1
MB90347ESPMC-GS-670E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB96F346RWBPQCR-GE2
MB96F346RWBPQCR-GE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 100PQFP
S79FL256SDSMFVG01
S79FL256SDSMFVG01
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
CY62187EV30LL-55BAXIT
CY62187EV30LL-55BAXIT
Infineon Technologies
IC SRAM 64MBIT PARALLEL 48FBGA
S34ML01G200TFA003
S34ML01G200TFA003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I