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| Part Number | IPB100N04S2L03ATMA2 | IPB160N04S2L03ATMA2 | IPB100N04S2L-03ATMA2 | IPB100N04S2L03ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Discontinued at Digi-Key | Active | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 160A (Tc) | 100A (Tc) | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V | 2.7mOhm @ 80A, 10V | 3.3mOhm @ 80A, 10V | 3mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | 230 nC @ 5 V | 230 nC @ 10 V | 230 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V | 6000 pF @ 15 V | 6000 pF @ 25 V | 6000 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-7-3 | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
