IPB100N04S204ATMA1
  • Share:

Infineon Technologies IPB100N04S204ATMA1

Manufacturer No:
IPB100N04S204ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB100N04S204ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:172 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
362

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB100N04S204ATMA1 IPB100N04S204ATMA4  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V 172 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FCA47N60
FCA47N60
onsemi
MOSFET N-CH 600V 47A TO3PN
SSM3J378R,LF
SSM3J378R,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 6A SOT23F
IRFU3607PBF
IRFU3607PBF
Infineon Technologies
MOSFET N-CH 75V 56A IPAK
TK35A65W,S5X
TK35A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 35A TO220SIS
STP6N62K3
STP6N62K3
STMicroelectronics
MOSFET N-CH 620V 5.5A TO220AB
DMN4035L-7
DMN4035L-7
Diodes Incorporated
MOSFET N-CH 40V 4.6A SOT23
IXTT500N04T2
IXTT500N04T2
IXYS
MOSFET N-CH 40V 500A TO268
IRFBG20L
IRFBG20L
Vishay Siliconix
MOSFET N-CH 1000V 1.4A I2PAK
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
ZXM64N03XTC
ZXM64N03XTC
Diodes Incorporated
MOSFET N-CH 30V 5A 8MSOP
SUP40N10-30-GE3
SUP40N10-30-GE3
Vishay Siliconix
MOSFET N-CH 100V 38.5A TO220AB
5LP01M-TL-H
5LP01M-TL-H
onsemi
MOSFET P-CH 50V 70MA 3MCP

Related Product By Brand

BAR6306WH6327XTSA1
BAR6306WH6327XTSA1
Infineon Technologies
RF DIODE PIN 50V 250MW SOT323-3
IDP30E65D1XKSA1
IDP30E65D1XKSA1
Infineon Technologies
DIODE GP 650V 60A TO220-2-1
BCX71KE6327HTSA1
BCX71KE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT-23
BCP55E6327HTSA1
BCP55E6327HTSA1
Infineon Technologies
TRANS NPN 60V 1A SOT223-4
IPD65R380E6ATMA1
IPD65R380E6ATMA1
Infineon Technologies
MOSFET N-CH 650V 10.6A TO252-3
IRFS4410PBF-INF
IRFS4410PBF-INF
Infineon Technologies
HEXFET POWER MOSFET
IRF3205ZLPBF
IRF3205ZLPBF
Infineon Technologies
MOSFET N-CH 55V 75A TO262
IRF6637TR1PBF
IRF6637TR1PBF
Infineon Technologies
MOSFET N-CH 30V 14A DIRECTFET
S29AL008J70BFI010
S29AL008J70BFI010
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48FBGA
CY62156ESL-45BVXIT
CY62156ESL-45BVXIT
Infineon Technologies
IC SRAM 8MBIT PARALLEL 48VFBGA
STK14C88-3NF45I
STK14C88-3NF45I
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC
CY8C4125LQS-S423
CY8C4125LQS-S423
Infineon Technologies
IC MCU 32BIT 32KB FLASH 40QFN