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Part Number | IPB097N08N3 G | IPB097N08N3G |
---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies |
Product Status | Obsolete | Active |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V | 80 V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V |
Rds On (Max) @ Id, Vgs | 9.7mOhm @ 46A, 10V | 9.7mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 46µA | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 35 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V | 2410 pF @ 40 V |
FET Feature | - | - |
Power Dissipation (Max) | 100W (Tc) | 100W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | PG-TO263-3 | PG-TO263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |