IPB097N08N3 G
  • Share:

Infineon Technologies IPB097N08N3 G

Manufacturer No:
IPB097N08N3 G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB097N08N3 G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 70A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB097N08N3 G IPB097N08N3G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 46A, 10V 9.7mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410 pF @ 40 V 2410 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 100W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

DMP3130LQ-7
DMP3130LQ-7
Diodes Incorporated
MOSFET P-CH 30V 3.5A SOT23
SI3437DV-T1-GE3
SI3437DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 1.4A 6TSOP
FDMC86261P
FDMC86261P
onsemi
MOSFET P-CH 150V 2.7A/9A 8MLP
TK8A65D(STA4,Q,M)
TK8A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 8A TO220SIS
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
IRFH3707TRPBF
IRFH3707TRPBF
Infineon Technologies
MOSFET N-CH 30V 12A/29A 8PQFN
BS107PSTZ
BS107PSTZ
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
IRFS7734TRLPBF
IRFS7734TRLPBF
Infineon Technologies
MOSFET N-CH 75V 183A D2PAK
PJQ5419_R2_00001
PJQ5419_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
LND150N3-G-P002
LND150N3-G-P002
Microchip Technology
MOSFET N-CH 500V 30MA TO92-3
SCT10N120H
SCT10N120H
STMicroelectronics
SICFET N-CH 1200V 12A H2PAK-2
RSY160P05TL
RSY160P05TL
Rohm Semiconductor
MOSFET P-CH 45V 16A TCPT3

Related Product By Brand

BAV70WE6327
BAV70WE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BBY5802WH6327XTSA1
BBY5802WH6327XTSA1
Infineon Technologies
DIODE TUNING 10V 20MA SCD80
IRF9956TR
IRF9956TR
Infineon Technologies
MOSFET 2N-CH 30V 3.5A 8-SOIC
IRFS3206TRRPBF
IRFS3206TRRPBF
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
IRF7534D1PBF
IRF7534D1PBF
Infineon Technologies
MOSFET P-CH 20V 4.3A MICRO8
TLE9202EDXUMA1
TLE9202EDXUMA1
Infineon Technologies
IC DRIVER H-BRIDGE DSO-36
IRU431LCL5TR
IRU431LCL5TR
Infineon Technologies
IC VREF SHUNT ADJ 1% SOT23-5
MB90548GASPFV-GS-427E1
MB90548GASPFV-GS-427E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90025FPMT-GS-250E1
MB90025FPMT-GS-250E1
Infineon Technologies
IC MCU 120LQFP
CY90F020CPMT-GSE1
CY90F020CPMT-GSE1
Infineon Technologies
IC MCU 120LQFP
S29GL064S70TFA013
S29GL064S70TFA013
Infineon Technologies
IC FLASH 64MBIT PARALLEL 56TSOP
S25FL256SAGMFVR00
S25FL256SAGMFVR00
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC