IPB08CN10N G
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Infineon Technologies IPB08CN10N G

Manufacturer No:
IPB08CN10N G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB08CN10N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 95A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB08CN10N G IPB05CN10N G   IPB06CN10N G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 95A, 10V 5.1mOhm @ 100A, 10V 6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA 4V @ 250µA 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 181 nC @ 10 V 139 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 50 V 12000 pF @ 50 V 9200 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 167W (Tc) 300W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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