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| Part Number | IPB085N06L G | IPB065N06L G |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 80A, 10V | 6.2mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 125µA | 2V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V | 157 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V | 5100 pF @ 30 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 250W (Tc) |
| Operating Temperature | - | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
