IPB06N03LA
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Infineon Technologies IPB06N03LA

Manufacturer No:
IPB06N03LA
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB06N03LA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 50A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2653 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB06N03LA IPB09N03LA   IPB06N03LAT   IPB06N03LB   IPB03N03LA   IPB04N03LA   IPB05N03LA  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 30 V 25 V 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V 8.9mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 6.3mOhm @ 50A, 10V 2.7mOhm @ 55A, 10V 3.9mOhm @ 55A, 10V 4.6mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 20µA 2V @ 40µA 2V @ 40µA 2V @ 100µA 2V @ 60µA 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 13 nC @ 5 V 22 nC @ 5 V 22 nC @ 5 V 57 nC @ 5 V 32 nC @ 5 V 25 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2653 pF @ 15 V 1642 pF @ 15 V 2653 pF @ 15 V 2782 pF @ 15 V 7027 pF @ 15 V 3877 pF @ 15 V 3110 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 83W (Tc) 63W (Tc) 83W (Tc) 83W (Tc) 150W (Tc) 107W (Tc) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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