IPB065N15N3GATMA1
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Infineon Technologies IPB065N15N3GATMA1

Manufacturer No:
IPB065N15N3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB065N15N3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 130A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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In Stock

$8.54
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Similar Products

Part Number IPB065N15N3GATMA1 IPB065N10N3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V 6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 75 V 4910 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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