IPB065N06L G
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Infineon Technologies IPB065N06L G

Manufacturer No:
IPB065N06L G
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB065N06L G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:157 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB065N06L G IPB065N06LG   IPB085N06L G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.2mOhm @ 80A, 10V 6.2mOhm @ 80A, 10V 8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 180µA 2V @ 180µA 2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 10 V 157 nC @ 10 V 104 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 30 V 5100 pF @ 30 V 3500 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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