IPB065N03LGATMA1
  • Share:

Infineon Technologies IPB065N03LGATMA1

Manufacturer No:
IPB065N03LGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB065N03LGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
82

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB065N03LGATMA1 IPB055N03LGATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 15 V 3200 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 56W (Tc) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

TSM210N02CX RFG
TSM210N02CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 20V 6.7A SOT23
FCP4N60
FCP4N60
onsemi
MOSFET N-CH 600V 3.9A TO220-3
MSC080SMA120J
MSC080SMA120J
Microchip Technology
SICFET N-CH 1.2KV 35A SOT227
TPWR7904PB,L1XHQ
TPWR7904PB,L1XHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 150A 8DSOP
IPP083N10N5AKSA1
IPP083N10N5AKSA1
Infineon Technologies
MOSFET N-CH 100V 73A TO220-3
PSMN5R0-80BS,118
PSMN5R0-80BS,118
Nexperia USA Inc.
MOSFET N-CH 80V 100A D2PAK
62-0063PBF
62-0063PBF
Infineon Technologies
MOSFET N-CH 12V 15A 8SO
NTD32N06T4G
NTD32N06T4G
onsemi
MOSFET N-CH 60V 32A DPAK
SPB80N06S2L-06
SPB80N06S2L-06
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
STU5N62K3
STU5N62K3
STMicroelectronics
MOSFET N-CH 620V 4.2A IPAK
AOB412L
AOB412L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 8.2A/60A TO263
RV2C002UNT2L
RV2C002UNT2L
Rohm Semiconductor
MOSFET N-CH 20V 180MA DFN1006-3

Related Product By Brand

BCV29E6327HTSA1
BCV29E6327HTSA1
Infineon Technologies
TRANS NPN DARL 30V 0.5A SOT89
FF6MR12KM1BOSA1
FF6MR12KM1BOSA1
Infineon Technologies
MEDIUM POWER 62MM
IRF9540NPBF
IRF9540NPBF
Infineon Technologies
MOSFET P-CH 100V 23A TO220AB
AUIPS1042G
AUIPS1042G
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 8SO
CYIFS784BSXCT
CYIFS784BSXCT
Infineon Technologies
IC CLOCK SS LOW EMI 8-SOIC
CY22381SXI-186
CY22381SXI-186
Infineon Technologies
IC CLOCK GENERATOR
CY8CTMA884AE-12
CY8CTMA884AE-12
Infineon Technologies
IC TRUETOUCH CAPSENSE 100TQFP
MB90598GPFR-G-123-BND
MB90598GPFR-G-123-BND
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB95F572KPF-G-SNE2
MB95F572KPF-G-SNE2
Infineon Technologies
IC MCU 8BIT 8KB FLASH 8SOP
S25FL128SDPMFIG13
S25FL128SDPMFIG13
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY15B016J-SXET
CY15B016J-SXET
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC
S29GL128S90DHA023
S29GL128S90DHA023
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA