IPB055N03LGATMA1
  • Share:

Infineon Technologies IPB055N03LGATMA1

Manufacturer No:
IPB055N03LGATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB055N03LGATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 50A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
280

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB055N03LGATMA1 IPB065N03LGATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 30A, 10V 6.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 15 V 2400 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRLB3813PBF
IRLB3813PBF
Infineon Technologies
MOSFET N-CH 30V 260A TO220AB
SQJ486EP-T1_GE3
SQJ486EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 75V 30A PPAK SO-8
TK100E08N1,S1X
TK100E08N1,S1X
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 100A TO220
IXTH2N170D2
IXTH2N170D2
IXYS
MOSFET N-CH 1700V 2A TO247
RM80N100AT2
RM80N100AT2
Rectron USA
MOSFET N-CH 100V 80A TO220-3
DMTH4014LPSWQ-13
DMTH4014LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
ZXM41N10FTA
ZXM41N10FTA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
NTB6412ANG
NTB6412ANG
onsemi
MOSFET N-CH 100V 58A D2PAK
IPB180N06S4H1ATMA1
IPB180N06S4H1ATMA1
Infineon Technologies
MOSFET N-CH 60V 180A TO263-7
IPD036N04LGBTMA1
IPD036N04LGBTMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
STP140N4F6
STP140N4F6
STMicroelectronics
MOSFET N-CHANNEL 40V 80A TO220
NTMFS4935NT3G
NTMFS4935NT3G
onsemi
MOSFET N-CH 30V 13A/93A 5DFN

Related Product By Brand

BAT6404E6327
BAT6404E6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
IPB100N04S204ATMA4
IPB100N04S204ATMA4
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
IRF8010SPBF
IRF8010SPBF
Infineon Technologies
MOSFET N-CH 100V 80A D2PAK
IRF6621TRPBF
IRF6621TRPBF
Infineon Technologies
MOSFET N-CH 30V 12A DIRECTFET
IR3500AMTRPBF
IR3500AMTRPBF
Infineon Technologies
IC CTRL XPHASE3 VR11.0 32-MLPQ
IFX8117MEV33HTMA1
IFX8117MEV33HTMA1
Infineon Technologies
IC REG LINEAR 3.3V 1A SOT223-4
CY8C4014LQI-412T
CY8C4014LQI-412T
Infineon Technologies
IC MCU 32BIT 16KB FLASH 24SQFN
MB90543GSPMC-G-112JNERE2
MB90543GSPMC-G-112JNERE2
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90214PF-GT-343-BND-AE1
MB90214PF-GT-343-BND-AE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 80PQFP
CY7C1512V18-200BZI
CY7C1512V18-200BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S29PL032J60BFI120A
S29PL032J60BFI120A
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA
CY62256VNLL-70SNXI
CY62256VNLL-70SNXI
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOIC