IPB03N03LA
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Infineon Technologies IPB03N03LA

Manufacturer No:
IPB03N03LA
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB03N03LA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 80A TO263-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7027 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB03N03LA IPB03N03LAG   IPB04N03LA   IPB05N03LA   IPB06N03LA   IPB09N03LA   IPB03N03LB  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 25 V 25 V 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc) 80A (Tc) 50A (Tc) 50A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 55A, 10V 2.7mOhm @ 55A, 10V 3.9mOhm @ 55A, 10V 4.6mOhm @ 55A, 10V 5.9mOhm @ 30A, 10V 8.9mOhm @ 30A, 10V 2.8mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 100µA 2V @ 100µA 2V @ 60µA 2V @ 50µA 2V @ 40µA 2V @ 20µA 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 5 V 57 nC @ 5 V 32 nC @ 5 V 25 nC @ 5 V 22 nC @ 5 V 13 nC @ 5 V 59 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7027 pF @ 15 V 7027 pF @ 15 V 3877 pF @ 15 V 3110 pF @ 15 V 2653 pF @ 15 V 1642 pF @ 15 V 7624 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 107W (Tc) 94W (Tc) 83W (Tc) 63W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3-2 PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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