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| Part Number | IPB036N12N3GATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V | 3.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA | 4V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V | 211 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V | 13800 pF @ 60 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7 | PG-TO263-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
