Please send RFQ , we will respond immediately.
| Part Number | IPB034N06N3GATMA1 | IPB037N06N3GATMA1 | IPB054N06N3GATMA1 | IPB034N06L3GATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 90A (Tc) | 80A (Tc) | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V | 3.7mOhm @ 90A, 10V | 5.4mOhm @ 80A, 10V | 3.4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 93µA | 4V @ 90µA | 4V @ 58µA | 2.2V @ 93µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 98 nC @ 10 V | 82 nC @ 10 V | 79 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 30 V | 11000 pF @ 30 V | 6600 pF @ 30 V | 13000 pF @ 30 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 167W (Tc) | 188W (Tc) | 115W (Tc) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
