Infineon Technologies-IPB025N10N3GE8187ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:	206 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	14800 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)

Infineon Technologies IPB025N10N3GE8187ATMA1