Infineon Technologies-IPB020NE7N3GATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs:	206 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	14400 pF @ 37.5 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Infineon Technologies IPB020NE7N3GATMA1