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| Part Number | IPB020N04NGATMA1 | IPB023N04NGATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | 2.3mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 95µA | 4V @ 95µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 120 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 20 V | 10000 pF @ 20 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 167W (Tc) | 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 | PG-TO263-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
