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| Part Number | IPB019N08N5ATMA1 | IPB049N08N5ATMA1 | IPB015N08N5ATMA1 | IPB017N08N5ATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | - | N-Channel | N-Channel | N-Channel |
| Technology | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | - | 80 V | 80 V | 80 V |
| Current - Continuous Drain (Id) @ 25°C | - | 80A (Tc) | 180A (Tc) | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 6V, 10V | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | - | 4.9mOhm @ 80A, 10V | 1.5mOhm @ 100A, 10V | 1.7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | - | 3.8V @ 66µA | 3.8V @ 279µA | 3.8V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs | - | 53 nC @ 10 V | 222 nC @ 10 V | 223 nC @ 10 V |
| Vgs (Max) | - | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 3770 pF @ 40 V | 16900 pF @ 40 V | 16900 pF @ 40 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | - | 125W (Tc) | 375W (Tc) | 375W (Tc) |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | - | PG-TO263-3 | PG-TO263-7 | PG-TO263-3 |
| Package / Case | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
