IPB017N08N5ATMA1
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Infineon Technologies IPB017N08N5ATMA1

Manufacturer No:
IPB017N08N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB017N08N5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:223 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IPB017N08N5ATMA1 IPB019N08N5ATMA1   IPB015N08N5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V - 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) - 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V - 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V - 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280µA - 3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V - 222 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V - 16900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 375W (Tc) - 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO263-3 - PG-TO263-7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - TO-263-7, D²Pak (6 Leads + Tab)

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