IPB017N08N5ATMA1
  • Share:

Infineon Technologies IPB017N08N5ATMA1

Manufacturer No:
IPB017N08N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB017N08N5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:223 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$7.27
90

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB017N08N5ATMA1 IPB019N08N5ATMA1   IPB015N08N5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V - 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) - 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V - 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V - 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 280µA - 3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V - 222 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V - 16900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 375W (Tc) - 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package PG-TO263-3 - PG-TO263-7
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

AO3402
AO3402
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 4A SOT23-3L
STB11N52K3
STB11N52K3
STMicroelectronics
MOSFET N-CH 525V 10A D2PAK
TPH1110FNH,L1Q
TPH1110FNH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 10A 8SOP
IPW60R024P7XKSA1
IPW60R024P7XKSA1
Infineon Technologies
MOSFET N-CH 650V 101A TO247-3-41
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
PJD16P06A_L2_00001
PJD16P06A_L2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IRFF321
IRFF321
Harris Corporation
N-CHANNEL POWER MOSFET
STD30PF03LT4
STD30PF03LT4
STMicroelectronics
MOSFET P-CH 30V 24A DPAK
IRF644NLPBF
IRF644NLPBF
Vishay Siliconix
MOSFET N-CH 250V 14A I2PAK
IRLL3303TRPBF
IRLL3303TRPBF
Infineon Technologies
MOSFET N-CH 30V 4.6A SOT223
ZVN4306ASTOB
ZVN4306ASTOB
Diodes Incorporated
MOSFET N-CH 60V 1.1A E-LINE
FQB3P50TM
FQB3P50TM
onsemi
MOSFET P-CH 500V 2.7A D2PAK

Related Product By Brand

D2601N85TXPSA1
D2601N85TXPSA1
Infineon Technologies
DIODE GEN PURP 8.5KV 3040A
BSC150N03LDGATMA1
BSC150N03LDGATMA1
Infineon Technologies
MOSFET 2N-CH 30V 8A 8TDSON
IPW65R280E6
IPW65R280E6
Infineon Technologies
650 V COOLMOS E6 POWER MOSFET
IRFIZ48VPBF
IRFIZ48VPBF
Infineon Technologies
MOSFET N-CH 60V 39A TO220AB FP
IR2175STR
IR2175STR
Infineon Technologies
IC CURRENT SENSE 0.5% 8SOIC
IR1175STR
IR1175STR
Infineon Technologies
IC GATE DRVR LOW-SIDE 20SSOP
CY8C28452-24PVXIT
CY8C28452-24PVXIT
Infineon Technologies
IC MCU 8BIT 16KB FLASH 28SSOP
MB90587CAPF-G-127-BNDE1
MB90587CAPF-G-127-BNDE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB91F526LKCPMC-GSK5E2
MB91F526LKCPMC-GSK5E2
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 176LQFP
CY9BF105NABGL-GK6E1
CY9BF105NABGL-GK6E1
Infineon Technologies
IC MCU 32BIT 384KB FLSH 112PFBGA
CY14B256L-SZ45XI
CY14B256L-SZ45XI
Infineon Technologies
IC NVSRAM 256KBIT PAR 32SOIC
CY7C1321KV18-250BZC
CY7C1321KV18-250BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA