IPB016N06L3GATMA1
  • Share:

Infineon Technologies IPB016N06L3GATMA1

Manufacturer No:
IPB016N06L3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB016N06L3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$4.46
34

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB016N06L3GATMA1 IPB019N06L3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 196µA 2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 4.5 V 166 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 30 V 28000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FDJ127P
FDJ127P
Fairchild Semiconductor
MOSFET P-CH 20V 4.1A SC75-6 FLMP
SIL3407-TP
SIL3407-TP
Micro Commercial Co
MOSFET P-CH 30V 4.1A SOT23-6L
SQM85N15-19_GE3
SQM85N15-19_GE3
Vishay Siliconix
MOSFET N-CH 150V 85A TO263
FDB0630N1507L
FDB0630N1507L
onsemi
MOSFET N-CH 150V 130A TO263-7
BSO083N03MSGXUMA1
BSO083N03MSGXUMA1
Infineon Technologies
MOSFET N-CH 30V 11A 8DSO
TPH5R906NH,L1Q
TPH5R906NH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 28A 8SOP
IPD90N04S4L04ATMA1
IPD90N04S4L04ATMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
SIJA52ADP-T1-GE3
SIJA52ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 41.6A/131A PPAK
FDD20AN06A0-F085
FDD20AN06A0-F085
Fairchild Semiconductor
FDD20AN06 - N-CHANNEL POWERTRENC
IRFL210
IRFL210
Vishay Siliconix
MOSFET N-CH 200V 960MA SOT223
SI4102DY-T1-GE3
SI4102DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 3.8A 8SO
SPP20N60CFDHKSA1
SPP20N60CFDHKSA1
Infineon Technologies
MOSFET N-CH 650V 20.7A TO220-3

Related Product By Brand

IRG4PH40UPBF
IRG4PH40UPBF
Infineon Technologies
IGBT 1200V 41A 160W TO247AC
TC364DP64F300WAAKXUMA1
TC364DP64F300WAAKXUMA1
Infineon Technologies
IC MCU 32BIT 4MB FLASH 144LQFP
TCA355GGEG
TCA355GGEG
Infineon Technologies
TCA355 PROXIMITY SWITCH
IPS5451S
IPS5451S
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK
TLE75602EMDXUMA1
TLE75602EMDXUMA1
Infineon Technologies
IC PWR DRIVER N-CHAN 1:8 24SSOP
TLS805B1LDV33XUMA1
TLS805B1LDV33XUMA1
Infineon Technologies
IC REG LIN 3.3V 50MA TSON-10-2
KIT RF DIODE 2
KIT RF DIODE 2
Infineon Technologies
KIT SAMPLE RF FOR RF APPLICTN
MB90F022CPF-GS-9136
MB90F022CPF-GS-9136
Infineon Technologies
IC MCU MICOM FLASH 100QFP
MB90587CAPF-G-138-BNDE1
MB90587CAPF-G-138-BNDE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
S27KL0641DABHI030
S27KL0641DABHI030
Infineon Technologies
IC PSRAM 64MBIT PARALLEL 24FBGA
S70GL02GS12FHIV13
S70GL02GS12FHIV13
Infineon Technologies
IC FLASH 2GBIT PARALLEL 64FBGA
S29GL128P11TAI010
S29GL128P11TAI010
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP