IPB015N08N5ATMA1
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Infineon Technologies IPB015N08N5ATMA1

Manufacturer No:
IPB015N08N5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB015N08N5ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 180A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs:222 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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$8.22
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Similar Products

Part Number IPB015N08N5ATMA1 IPB017N08N5ATMA1   IPB019N08N5ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 80 V 80 V -
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 120A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V -
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V 1.7mOhm @ 100A, 10V -
Vgs(th) (Max) @ Id 3.8V @ 279µA 3.8V @ 280µA -
Gate Charge (Qg) (Max) @ Vgs 222 nC @ 10 V 223 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 16900 pF @ 40 V 16900 pF @ 40 V -
FET Feature - - -
Power Dissipation (Max) 375W (Tc) 375W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package PG-TO263-7 PG-TO263-3 -
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -

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