IPB014N06NATMA1
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Infineon Technologies IPB014N06NATMA1

Manufacturer No:
IPB014N06NATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB014N06NATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 34A/180A TO263-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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$5.24
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Similar Products

Part Number IPB014N06NATMA1 IPB010N06NATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc) 45A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 100A, 10V 1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143µA 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 208 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 30 V 15000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 214W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

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