IPB014N06NATMA1
  • Share:

Infineon Technologies IPB014N06NATMA1

Manufacturer No:
IPB014N06NATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB014N06NATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 34A/180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$5.24
65

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB014N06NATMA1 IPB010N06NATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc) 45A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 100A, 10V 1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143µA 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 208 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 30 V 15000 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 214W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

HUF75829D3
HUF75829D3
Fairchild Semiconductor
MOSFET N-CH 150V 18A IPAK
RFD16N05LSM
RFD16N05LSM
Harris Corporation
N-CHANNEL POWER MOSFET
2SJ651
2SJ651
onsemi
MOSFET P-CH 60V 20A TO220ML
AUIRFZ24NS
AUIRFZ24NS
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
SPD03N60S5XT
SPD03N60S5XT
Infineon Technologies
SPD03N60 - 600V COOLMOS N-CHANNE
FDB024N06
FDB024N06
onsemi
MOSFET N-CH 60V 120A D2PAK
STN1NK60Z
STN1NK60Z
STMicroelectronics
MOSFET N-CH 600V 300MA SOT223
IPP60R180P7XKSA1
IPP60R180P7XKSA1
Infineon Technologies
MOSFET N-CH 650V 18A TO220-3
NTMFS4C09NAT1G
NTMFS4C09NAT1G
onsemi
MOSFET N-CH 30V 9A/52A 5DFN
RM8N650IP
RM8N650IP
Rectron USA
MOSFET N-CHANNEL 650V 8A TO251
NVMJS1D0N04CTWG
NVMJS1D0N04CTWG
onsemi
MOSFET N-CH 40V 46A/300A 8LFPAK
IRFPS40N50LPBF
IRFPS40N50LPBF
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247

Related Product By Brand

BC848CWH6327
BC848CWH6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT323-3
IRF8915TR
IRF8915TR
Infineon Technologies
MOSFET 2N-CH 20V 8.9A 8-SOIC
BSO200P03SHXUMA1
BSO200P03SHXUMA1
Infineon Technologies
MOSFET P-CH 30V 7.4A 8DSO
IPD60R380P6BTMA1
IPD60R380P6BTMA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO252-3
SKB15N60 E8151
SKB15N60 E8151
Infineon Technologies
IGBT 600V 31A 139W TO263-3
IRG8P08N120KD-EPBF
IRG8P08N120KD-EPBF
Infineon Technologies
IGBT 1200V 15A TO247AD
XMC4400F64F512ABXQMA1
XMC4400F64F512ABXQMA1
Infineon Technologies
IC MCU 32BIT 512KB FLASH 64LQFP
TLI4971A025T5UE0001XUMA1
TLI4971A025T5UE0001XUMA1
Infineon Technologies
SENSOR CURRENT HALL 25A 8TISON
MB89637RPF-G-1434E1
MB89637RPF-G-1434E1
Infineon Technologies
IC MCU 8BIT 32KB MROM 64QFP
MB90349CEPF-G-408E1
MB90349CEPF-G-408E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB91F467SAPMC-C0010
MB91F467SAPMC-C0010
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 176LQFP
CY7C199C-20ZXIT
CY7C199C-20ZXIT
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I