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| Part Number | IPB011N04NGATMA1 | IPB015N04NGATMA1 | IPB041N04NGATMA1 | IPB011N04LGATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | 120A (Tc) | 80A (Tc) | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 100A, 10V | 1.5mOhm @ 100A, 10V | 4.1mOhm @ 80A, 10V | 1.1mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA | 4V @ 200µA | 4V @ 45µA | 2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V | 250 nC @ 10 V | 56 nC @ 10 V | 346 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 20 V | 20000 pF @ 20 V | 4500 pF @ 20 V | 29000 pF @ 20 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 250W (Tc) | 250W (Tc) | 94W (Tc) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 | PG-TO263-3 | PG-TO263-3 | PG-TO263-7-3 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) |
