IPB010N06NATMA1
  • Share:

Infineon Technologies IPB010N06NATMA1

Manufacturer No:
IPB010N06NATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPB010N06NATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 45A/180A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:45A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:208 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$8.54
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPB010N06NATMA1 IPB014N06NATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Ta), 180A (Tc) 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 280µA 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 208 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V 7800 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-7 PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab)

Related Product By Categories

2N6660
2N6660
Microchip Technology
MOSFET N-CH 60V 410MA TO39
RJK60S5DPP-E0#T2
RJK60S5DPP-E0#T2
Renesas Electronics America Inc
MOSFET N-CH 600V 20A TO220FP
ZXMN2069FTA
ZXMN2069FTA
Diodes Incorporated
MOSFET N-CH SOT23-3
AUIRF5210STRL
AUIRF5210STRL
Infineon Technologies
MOSFET P-CH 100V 38A D2PAK
SQ2351ES-T1_GE3
SQ2351ES-T1_GE3
Vishay Siliconix
MOSFET P-CH 20V 3.2A SOT23-3
BUK9Y6R0-60E,115
BUK9Y6R0-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
FDC30N20DZ
FDC30N20DZ
onsemi
MOSFET N-CH 30V 4.6A SUPERSOT6
SIHD6N62E-GE3
SIHD6N62E-GE3
Vishay Siliconix
MOSFET N-CH 620V 6A DPAK
2SK3403(Q)
2SK3403(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 13A TO220FL
AOT20C60
AOT20C60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 20A TO220
DMTH10H030LK3-13
DMTH10H030LK3-13
Diodes Incorporated
MOSFET N-CH 100V 28A TO252
RRR040P03TL
RRR040P03TL
Rohm Semiconductor
MOSFET P-CH 30V 4A TSMT3

Related Product By Brand

IRFH7194TRPBF
IRFH7194TRPBF
Infineon Technologies
MOSFET N-CH 100V 11A/35A 8PQFN
F3L300R12MT4B23BOSA1
F3L300R12MT4B23BOSA1
Infineon Technologies
IGBT MOD 1200V 450A 1550W
AUIRGDC0250
AUIRGDC0250
Infineon Technologies
IGBT 1200V 141A 543W TO-220
TLE92613QXXUMA2
TLE92613QXXUMA2
Infineon Technologies
IC INTERFACE SPECIALIZED 48VQFN
BTS5016SDAAUMA1
BTS5016SDAAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CHL8326-06CRT
CHL8326-06CRT
Infineon Technologies
IC REG BUCK 48VQFN
PVG612ASPBF
PVG612ASPBF
Infineon Technologies
SSR RELAY SPST-NO 2A 0-60V
CY25100SXC-062T
CY25100SXC-062T
Infineon Technologies
IC CLOCK GENERATOR
MB90423GAVPF-G-324
MB90423GAVPF-G-324
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90F022CPF-GS-9201
MB90F022CPF-GS-9201
Infineon Technologies
IC MCU MICOM FLASH 100QFP
S29GL256S90FAI020
S29GL256S90FAI020
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
STK11C88-SF45
STK11C88-SF45
Infineon Technologies
IC NVSRAM 256KBIT PAR 28SOIC