IPAW60R380CEXKSA1
  • Share:

Infineon Technologies IPAW60R380CEXKSA1

Manufacturer No:
IPAW60R380CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAW60R380CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 15A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):31W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$1.59
374

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPAW60R380CEXKSA1 IPAW60R280CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 950 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) 31W (Tc) 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP PG-TO220 Full Pack, Wide Creepage
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Variant

Related Product By Categories

TSM260P02CX6 RFG
TSM260P02CX6 RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 6.5A SOT26
STH250N55F3-6
STH250N55F3-6
STMicroelectronics
MOSFET N-CH 55V 180A H2PAK
STB200N6F3
STB200N6F3
STMicroelectronics
MOSFET N-CH 60V 120A D2PAK
FQI4N90TU
FQI4N90TU
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 4
PSMN7R5-60YLX
PSMN7R5-60YLX
Nexperia USA Inc.
MOSFET N-CH 60V 86A LFPAK56
DMP6185SK3-13
DMP6185SK3-13
Diodes Incorporated
MOSFET P-CH 60V 9.4A TO252
DMT64M8LSS-13
DMT64M8LSS-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
MIC94050BM4 TR
MIC94050BM4 TR
Microchip Technology
MOSFET P-CH 6V 1.8A SOT-143
FDV303N_NB9U008
FDV303N_NB9U008
onsemi
MOSFET N-CH 25V 680MA SOT-23
AOI2614
AOI2614
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 13A/35A TO251A
NVMFS6B05NT3G
NVMFS6B05NT3G
onsemi
MOSFET N-CH 100V 104A 5DFN
TSM070NH04LCV RGG
TSM070NH04LCV RGG
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER

Related Product By Brand

ESD24VL1B-02LS E6327
ESD24VL1B-02LS E6327
Infineon Technologies
TVS DIODE 24VWM 55VC TSSLP-2-1
BC847PNH6433XTMA1
BC847PNH6433XTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
IPA040N08NM5SXKSA1
IPA040N08NM5SXKSA1
Infineon Technologies
TRENCH 40<-<100V PG-TO220-3
IRF3205ZL
IRF3205ZL
Infineon Technologies
MOSFET N-CH 55V 75A TO262
TDA21101G
TDA21101G
Infineon Technologies
IC DRIVER DUAL HS MOSFET 8DSO
IRS2110PBF
IRS2110PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14DIP
BTS452TT
BTS452TT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY25100SXC-048
CY25100SXC-048
Infineon Technologies
IC CLOCK GENERATOR
MB89698BPFM-G-330
MB89698BPFM-G-330
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90F884CPMC-GS-N2E1
MB90F884CPMC-GS-N2E1
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100LQFP
S29GL01GS11FHIV10
S29GL01GS11FHIV10
Infineon Technologies
IC FLASH 1GBIT PARALLEL 64FBGA
CY9AF104RAPMC-G-JNE1
CY9AF104RAPMC-G-JNE1
Infineon Technologies
IC MEM MM MCU 120LQFP