IPAW60R280CEXKSA1
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Infineon Technologies IPAW60R280CEXKSA1

Manufacturer No:
IPAW60R280CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPAW60R280CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19.3A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack, Wide Creepage
Package / Case:TO-220-3 Full Pack, Variant
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Similar Products

Part Number IPAW60R280CEXKSA1 IPAW60R380CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V 700 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) 32W (Tc) 31W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack, Wide Creepage PG-TO220-FP
Package / Case TO-220-3 Full Pack, Variant TO-220-3 Full Pack

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