IPAW60R280CEXKSA1
  • Share:

Infineon Technologies IPAW60R280CEXKSA1

Manufacturer No:
IPAW60R280CEXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPAW60R280CEXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19.3A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):32W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack, Wide Creepage
Package / Case:TO-220-3 Full Pack, Variant
0 Remaining View Similar

In Stock

$0.80
187

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPAW60R280CEXKSA1 IPAW60R380CEXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc) 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V 700 pF @ 100 V
FET Feature Super Junction Super Junction
Power Dissipation (Max) 32W (Tc) 31W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack, Wide Creepage PG-TO220-FP
Package / Case TO-220-3 Full Pack, Variant TO-220-3 Full Pack

Related Product By Categories

HUF76639S3S
HUF76639S3S
Fairchild Semiconductor
MOSFET N-CH 100V 51A D2PAK
STI45N10F7
STI45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A I2PAK
BUK9Y19-75B,115
BUK9Y19-75B,115
Nexperia USA Inc.
MOSFET N-CH 75V 48.2A LFPAK56
TPH1R204PL1,LQ
TPH1R204PL1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
SIA477EDJT-T1-GE3
SIA477EDJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 12A PPAK SC70-6
SPP15P10PLHXKSA1
SPP15P10PLHXKSA1
Infineon Technologies
MOSFET P-CH 100V 15A TO220-3
PJQ2461-AU_R1_000A1
PJQ2461-AU_R1_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
2N6759
2N6759
Harris Corporation
N-CHANNEL POWER MOSFET
IRFR214TRLPBF
IRFR214TRLPBF
Vishay Siliconix
MOSFET N-CH 250V 2.2A DPAK
BUK7105-40AIE,118
BUK7105-40AIE,118
Nexperia USA Inc.
MOSFET N-CH 40V 75A SOT426
NTP75N06
NTP75N06
onsemi
MOSFET N-CH 60V 75A TO220AB
SPA07N65C3XKSA1
SPA07N65C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP

Related Product By Brand

IRFS4227TRLPBF
IRFS4227TRLPBF
Infineon Technologies
MOSFET N-CH 200V 62A D2PAK
IPB65R190CFDATMA1
IPB65R190CFDATMA1
Infineon Technologies
MOSFET N-CH 650V 17.5A D2PAK
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
IRG4BC20KDSTRLP
IRG4BC20KDSTRLP
Infineon Technologies
IGBT 600V 16A 60W D2PAK
BTS6143DNT
BTS6143DNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY3664-EXT
CY3664-EXT
Infineon Technologies
CY3655-DK/64215/63823 EVAL BRD
CY7C64013-SC
CY7C64013-SC
Infineon Technologies
IC MCU 8K FULL SPEED USB 28SOIC
CY8C28645-24LTXI
CY8C28645-24LTXI
Infineon Technologies
IC MCU 8BIT 16KB FLASH 48QFN
MB90428GAVPF-GS-302
MB90428GAVPF-GS-302
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY7C1356CV25-166AXC
CY7C1356CV25-166AXC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP
CYK512K16SCAU-70BAXIT
CYK512K16SCAU-70BAXIT
Infineon Technologies
IC PSRAM 8MBIT PARALLEL 48FBGA
CY7C1325S-100AXI
CY7C1325S-100AXI
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP