Infineon Technologies-IPAW60R190CEXKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	26.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:	63 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1400 pF @ 100 V
FET Feature:	Super Junction
Power Dissipation (Max):	34W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-FP
Package / Case:	TO-220-3 Full Pack

Infineon Technologies IPAW60R190CEXKSA1