IPAW60R180P7SXKSA1
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Infineon Technologies IPAW60R180P7SXKSA1

Manufacturer No:
IPAW60R180P7SXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAW60R180P7SXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 650V 18A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):26W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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$2.44
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Similar Products

Part Number IPAW60R180P7SXKSA1 IPAW60R280P7SXKSA1   IPAN60R180P7SXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 650 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 12A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 180mOhm @ 5.6A, 10V 280mOhm @ 3.8A, 10V -
Vgs(th) (Max) @ Id 4V @ 280µA 4V @ 190µA -
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 18 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1081 pF @ 400 V 761 pF @ 400 V -
FET Feature - - -
Power Dissipation (Max) 26W (Tc) 24W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220 Full Pack PG-TO220-FP PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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