IPAN80R280P7XKSA1
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Infineon Technologies IPAN80R280P7XKSA1

Manufacturer No:
IPAN80R280P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPAN80R280P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 17A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IPAN80R280P7XKSA1 IPA80R280P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 7.2A, 10V 280mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 360µA 3.5V @ 360µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 500 V 1200 pF @ 500 V
FET Feature - Super Junction
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-FP PG-TO220-3-31
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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